Sensing Behavior Of CuO-Doped SnO2 Thick Film Sensor For H2S Detection

نویسندگان

  • J. K. Srivastava
  • Amit Gupta
  • Anand A. Bhaskar
چکیده

The effect of CuO doping on the electrical resistance and the sensitivity of thick film gas sensors based on CuOdoped (1%, 2% and 5% by wt.) SnO2has been investigated by us. A suitable gas sensor structure wasfabricated on 1 ̋x1 ̋ alumina substrate using thick film technology. The fabricated sensor‟s reaction with H2S gas (250 ppm-1000 ppm)was tested in the temperature range of 150350 ̊C. At 250 ̊C the sensor with 5% CuO doping was found to be most sensitive for H2S gas .The electrical resistance and the sensitivity were increased by increasing the concentration of CuO. The substitution of Sn +4 by Cu +2 leads to the creation of oxygen vacancies. The increased oxygen deficiency is believed to be responsible for enhancing the resistance.

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تاریخ انتشار 2014